Справочник MOSFET. 2SK214

 

2SK214 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2SK214
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 160 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 50 Ohm
   Тип корпуса: TO220AB
     - подбор MOSFET транзистора по параметрам

 

2SK214 Datasheet (PDF)

 ..1. Size:71K  renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdfpdf_icon

2SK214

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:33K  hitachi
2sk213 2sk214 2sk215 2sk216.pdfpdf_icon

2SK214

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

 0.1. Size:123K  1
2sk2141.pdfpdf_icon

2SK214

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2141SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2141 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-state ResistanceRDS(on) = 1.1 MAX. (VGS = 10 V, ID = 3

 0.2. Size:134K  1
2sk2140 2sk2140-z.pdfpdf_icon

2SK214

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2140, 2SK2140-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 1.5 MAX.

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK1280 | AO6804A | BFR84 | HGB042N10S | WMJ38N60C2 | UF640G-TN3-R | IPB407N30N

 

 
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