Справочник MOSFET. RQA0004LXAQS

 

RQA0004LXAQS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RQA0004LXAQS

Маркировка: LX

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 3 W

Предельно допустимое напряжение сток-исток (Uds): 16 V

Предельно допустимое напряжение затвор-исток (Ugs): 5 V

Максимально допустимый постоянный ток стока (Id): 0.3 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 5 pf

Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm

Тип корпуса: UPAK

Аналог (замена) для RQA0004LXAQS

 

 

RQA0004LXAQS Datasheet (PDF)

1.1. r07ds0496ej rqa0004lxa.pdf Size:141K _renesas

RQA0004LXAQS
RQA0004LXAQS

Preliminary Datasheet R07DS0496EJ0200 RQA0004LXAQS (Previous: REJ03G1567-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 30, 2011 Features ? High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) ? Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK) 3 1 2 1. Gate 3

3.1. r07ds0418ej rqa0004pxd.pdf Size:143K _renesas

RQA0004LXAQS
RQA0004LXAQS

Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Silicon N-Channel MOS FET Sep 09, 2011 Features ? High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) ? Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2, 4 Note: Marking i

 4.1. rej03g1325 rqa0005qxdqsds.pdf Size:212K _renesas

RQA0004LXAQS
RQA0004LXAQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. r07ds0493ej rqa0009sxa.pdf Size:217K _renesas

RQA0004LXAQS
RQA0004LXAQS

Preliminary Datasheet R07DS0493EJ0200 RQA0009SXAQS (Previous: REJ03G1566-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features ? High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) ? Compact package capable of surface mounting ? Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

 4.3. rej03g1326 rqa0008rxdqsds.pdf Size:213K _renesas

RQA0004LXAQS
RQA0004LXAQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. r07ds0492ej rqa0009txd.pdf Size:217K _renesas

RQA0004LXAQS
RQA0004LXAQS

Preliminary Datasheet R07DS0492EJ0200 RQA0009TXDQS (Previous: REJ03G1520-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features ? High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) ? Compact package capable of surface mounting ? Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

 4.5. rej03g1569 rqa0008nxaqsds.pdf Size:166K _renesas

RQA0004LXAQS
RQA0004LXAQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g1568 rqa0005mxaqsds.pdf Size:123K _renesas

RQA0004LXAQS
RQA0004LXAQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Другие MOSFET... 2SJ351 , 2SJ352 , RQA0011DNS , RQA0004PXDQS , RQA0005QXDQS , RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , IRF630A , RQA0005AQS , RQA0008AQS , RQA0009SXAQS , RQA0010UXAQS , 2SJ661 , 2SJ665 , 2SK3707 , 2SK3821 .

 

 
Back to Top

 


RQA0004LXAQS
  RQA0004LXAQS
  RQA0004LXAQS
 

social 

Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

Back to Top