2SK3824. Аналоги и основные параметры
Наименование производителя: 2SK3824
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 230 ns
Cossⓘ - Выходная емкость: 500 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: TO220
Аналог (замена) для 2SK3824
- подборⓘ MOSFET транзистора по параметрам
2SK3824 даташит
..1. Size:38K sanyo
2sk3824.pdf 

Ordering number ENN8230 2SK3824 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3824 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
..2. Size:288K inchange semiconductor
2sk3824.pdf 

isc N-Channel MOSFET Transistor 2SK3824 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.1. Size:45K 1
2sk3822.pdf 

Ordering number ENN8014 2SK3822 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3822 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.2. Size:38K 1
2sk3828.pdf 

Ordering number ENN8245 2SK3828 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3828 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.3. Size:38K 1
2sk3825.pdf 

Ordering number ENN8242 2SK3825 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3825 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.4. Size:40K sanyo
2sk3821.pdf 

Ordering number ENN8058 2SK3821 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3821 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.5. Size:38K sanyo
2sk3826.pdf 

Ordering number ENN8243 2SK3826 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3826 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.6. Size:38K sanyo
2sk3827.pdf 

Ordering number ENN8244 2SK3827 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3827 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.7. Size:38K sanyo
2sk3829.pdf 

Ordering number ENN8031 2SK3829 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3829 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.8. Size:53K sanyo
2sk3820.pdf 

Ordering number ENN8147 2SK3820 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3820 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.9. Size:38K sanyo
2sk3823.pdf 

Ordering number ENN8241 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3823 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.10. Size:357K inchange semiconductor
2sk3820b.pdf 

isc N-Channel MOSFET Transistor 2SK3820B FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.11. Size:60K inchange semiconductor
2sk382.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulator DC-DC converter, RF amplifiers and ultrasonic
8.12. Size:282K inchange semiconductor
2sk3821k.pdf 

isc N-Channel MOSFET Transistor 2SK3821K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.13. Size:289K inchange semiconductor
2sk3826.pdf 

isc N-Channel MOSFET Transistor 2SK3826 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.14. Size:356K inchange semiconductor
2sk3821b.pdf 

isc N-Channel MOSFET Transistor 2SK3821B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.15. Size:289K inchange semiconductor
2sk3827.pdf 

isc N-Channel MOSFET Transistor 2SK3827 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.16. Size:289K inchange semiconductor
2sk3828.pdf 

isc N-Channel MOSFET Transistor 2SK3828 FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.17. Size:273K inchange semiconductor
2sk3829.pdf 

isc N-Channel MOSFET Transistor 2SK3829 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 27.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.18. Size:357K inchange semiconductor
2sk3822b.pdf 

isc N-Channel MOSFET Transistor 2SK3822B FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.19. Size:283K inchange semiconductor
2sk3822k.pdf 

isc N-Channel MOSFET Transistor 2SK3822K FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.20. Size:283K inchange semiconductor
2sk3820k.pdf 

isc N-Channel MOSFET Transistor 2SK3820K FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.21. Size:288K inchange semiconductor
2sk3823.pdf 

isc N-Channel MOSFET Transistor 2SK3823 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 27.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.22. Size:289K inchange semiconductor
2sk3825.pdf 

isc N-Channel MOSFET Transistor 2SK3825 FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
Другие MOSFET... RQA0008NXAQS
, RQA0009SXAQS
, RQA0010UXAQS
, 2SJ661
, 2SJ665
, 2SK3707
, 2SK3821
, 2SK3823
, IRF840
, 2SK3826
, 2SK3827
, 2SK3829
, 2SK3830
, 2SK3832
, 2SK3833
, 2SK3835
, 2SK3836
.
History: MDP1921
| TPW4R50ANH