2SK3829 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3829
Маркировка: K3829
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 40 nC
trⓘ - Время нарастания: 180 ns
Cossⓘ - Выходная емкость: 266 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0275 Ohm
Тип корпуса: TO3PB
2SK3829 Datasheet (PDF)
2sk3829.pdf
Ordering number : ENN8031 2SK3829N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3829ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3829.pdf
isc N-Channel MOSFET Transistor 2SK3829FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3822.pdf
Ordering number : ENN8014 2SK3822N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3822ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3828.pdf
Ordering number : ENN8245 2SK3828N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3828ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3825.pdf
Ordering number : ENN8242 2SK3825N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3825ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3821.pdf
Ordering number : ENN8058 2SK3821N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3821ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3826.pdf
Ordering number : ENN8243 2SK3826N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3826ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3827.pdf
Ordering number : ENN8244 2SK3827N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3827ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3820.pdf
Ordering number : ENN8147 2SK3820N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3820ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3823.pdf
Ordering number : ENN8241 2SK3823N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3823ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3824.pdf
Ordering number : ENN8230 2SK3824N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3824ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3820b.pdf
isc N-Channel MOSFET Transistor 2SK3820BFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk382.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulatorDC-DC converter, RF amplifiersand ultrasonic
2sk3821k.pdf
isc N-Channel MOSFET Transistor 2SK3821KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3826.pdf
isc N-Channel MOSFET Transistor 2SK3826FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3821b.pdf
isc N-Channel MOSFET Transistor 2SK3821BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3827.pdf
isc N-Channel MOSFET Transistor 2SK3827FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3828.pdf
isc N-Channel MOSFET Transistor 2SK3828FEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3822b.pdf
isc N-Channel MOSFET Transistor 2SK3822BFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3822k.pdf
isc N-Channel MOSFET Transistor 2SK3822KFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3820k.pdf
isc N-Channel MOSFET Transistor 2SK3820KFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3823.pdf
isc N-Channel MOSFET Transistor 2SK3823FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3825.pdf
isc N-Channel MOSFET Transistor 2SK3825FEATURESDrain Current : I = 74A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3824.pdf
isc N-Channel MOSFET Transistor 2SK3824FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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