2SK4094
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK4094
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 90
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 100
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 630
ns
Cossⓘ - Выходная емкость: 1200
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005
Ohm
Тип корпуса: TO2203L
- подбор MOSFET транзистора по параметрам
2SK4094
Datasheet (PDF)
..1. Size:345K sanyo
2sk4094.pdf 

2SK4094Ordering number : ENA0523ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4094ApplicationsFeatures ON-resistance RDS(on)1=3.8m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 V
..2. Size:259K inchange semiconductor
2sk4094.pdf 

isc N-Channel MOSFET Transistor 2SK4094FEATURESDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Motor Dr
0.1. Size:274K onsemi
2sk4094-1e.pdf 

Ordering number : ENA0523B2SK4094N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 5m , TO-220-3LFeatures ON-resistance RDS(on)1=3.8m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain C
8.1. Size:48K sanyo
2sk4097ls.pdf 

Ordering number : ENA0775 2SK4097LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4097LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
8.2. Size:48K sanyo
2sk4096ls.pdf 

Ordering number : ENA0774 2SK4096LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4096LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
8.3. Size:67K sanyo
2sk4099ls.pdf 

Ordering number : ENA0777A 2SK4099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4099LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
8.4. Size:52K sanyo
2sk4098ls.pdf 

Ordering number : ENA0776 2SK4098LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4098LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
8.5. Size:106K renesas
2sk4093.pdf 

2SK4093 Silicon N Channel MOS FET High Speed Power Switching REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Features Capable of 2.5V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. Gate32S1Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain
8.6. Size:284K renesas
2sk4090-s27-zk.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:299K renesas
2sk4092.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:283K renesas
2sk4091-s27-zk.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:119K renesas
rej03g1534 2sk4093ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.10. Size:250K onsemi
2sk4096ls-1e.pdf 

Ordering number : ENA0774C2SK4096LSN-Channel Power MOSFEThttp://onsemi.com500V, 8A, 850m , TO-220F-3FSFeatures ON-resistance RDS(on)=0.65 (typ.) Input capacitance Ciss=600pF 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 30 VIDc*1 Lim
8.11. Size:280K inchange semiconductor
2sk4097ls.pdf 

isc N-Channel MOSFET Transistor 2SK4097LSFEATURESDrain Current : I = 9.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.12. Size:286K inchange semiconductor
2sk4091d.pdf 

isc N-Channel MOSFET Transistor 2SK4091DFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.13. Size:280K inchange semiconductor
2sk4096ls.pdf 

isc N-Channel MOSFET Transistor 2SK4096LSFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.14. Size:280K inchange semiconductor
2sk4099ls.pdf 

isc N-Channel MOSFET Transistor 2SK4099LSFEATURESDrain Current : I = 8.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.94(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.15. Size:354K inchange semiconductor
2sk4091i.pdf 

isc N-Channel MOSFET Transistor 2SK4091IFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.16. Size:280K inchange semiconductor
2sk4098ls.pdf 

isc N-Channel MOSFET Transistor 2SK4098LSFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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History: SI3812DV
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