3LN01SS - аналоги, параметры транзистора - Справочник транзисторов

3LN01SS даташит

..1. Size:260K sanyo
3ln01ss.pdf pdf_icon

Ordering number EN6546A 3LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

8.1. Size:48K sanyo
3ln01s.pdf pdf_icon

Ordering number EN6957A 3LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10

8.2. Size:27K sanyo
3ln01sp.pdf pdf_icon

Ordering number ENN6545 3LN01SP N-Channel Silicon MOSFET 3LN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [3LN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C

9.1. Size:47K sanyo
3ln01m.pdf pdf_icon

Ordering number EN6138A 3LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01M Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10