CPH3356Ordering number : ENA1124SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3356ApplicationsFeatures 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 1

CPH3350Ordering number : ENA0151SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3350ApplicationsFeatures Ultrahigh-speed switching 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VG

CPH3355Ordering number : ENA1905SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3355ApplicationsFeatures ON-resistance RDS(on)1=120m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sou

CPH3351Ordering number : ENA1880SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3351ApplicationsFeatures ON-resistance RDS(on)1=190m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Sou

CPH3351 Power MOSFET www.onsemi.com -60V, 250m, -1.8A, Single P-ChannelVDSS RDS(on) Max ID MaxFeatures 250m@ -10V Low On-Resistance -60V 330m@ -4.5V -1.8A 4V Drive 350m@ -4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications P-Channel Absolute Maximum Ratings at Ta = 25C 3Param