Справочник MOSFET. MCH3375

 

MCH3375 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MCH3375
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.3 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.295 Ohm
   Тип корпуса: SOT323 MCPH3

 Аналог (замена) для MCH3375

 

 

MCH3375 Datasheet (PDF)

 ..1. Size:379K  1
 mch3375.pdf

MCH3375 MCH3375

MCH3375Ordering number : ENA0342SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3375ApplicationsFeatures ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sourc

 8.1. Size:276K  sanyo
 mch3376.pdf

MCH3375 MCH3375

MCH3376Ordering number : ENA1564SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3376ApplicationsFeatures Low ON-resistance. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID

 8.2. Size:264K  sanyo
 mch3374.pdf

MCH3375 MCH3375

Ordering number : ENA0857 MCH3374SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETMCH3374 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS

 8.3. Size:66K  sanyo
 mch3377.pdf

MCH3375 MCH3375

Ordering number : ENA0957 MCH3377SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3377ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

 8.4. Size:1015K  onsemi
 mch3376.pdf

MCH3375 MCH3375

Ordering number : ENA1564BMCH3376Power MOSFEThttp://onsemi.com 20V, 241m , 1.5A, Single P-ChannelFeatures ESD diode-Protected gate Drive at low voltage:1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou

 8.5. Size:569K  onsemi
 mch3374.pdf

MCH3375 MCH3375

MCH3374 Power MOSFET 12V, 70m, 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology,which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R

 8.6. Size:1020K  onsemi
 mch3377.pdf

MCH3375 MCH3375

Ordering number : ENA0957BMCH3377P-Channel Power MOSFEThttp://onsemi.com 20V, 3A, 83m , Single MCPH3Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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