2SK3710 - описание и поиск аналогов

http //www.sanken-ele.co.jp SANKEN ELECTRIC May. 2011 Features Package Low on-state resistance 5.0m VGS=10V TO220S Built-in gate protection diode SMD PKG Applications DC DC converter Mortar drive Internal Equivalent Circuit Key Specifications V(BR)DSS = 60V (ID=100uA) (2) RDS(ON) = 5m max (ID=35A / VGS=10V)

isc N-Channel MOSFET Transistor 2SK3710 FEATURES Drain Current I =85A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose app

2SK371 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK371 For Low Noise Audio Amplifier Applications Unit mm Suitable for use as first stage for equalizer and MC head amplifiers. High Yfs Yfs = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) High breakdown voltage VGDS = -40 V Super low noise NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 m

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3715 Isolated TO-220 FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A)

60V N -ch MOSFET 2SK3711 December 2005 Package TO3P Features Low on-resistance Built-in gate protection diode Avalanche energy capability guaranteed Applications Electric power steering High current switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit Drain to So

SMD Type MOSFET MOS Field Effect Transistor 2SK3713 TO-263 Unit mm +0.2 4.57-0.2 +0.1 Features 1.27-0.1 Super high VGS(off) VGS(off) = 3.8 to 5.8 V Low Crss Crss = 6.5 pF TYP. Low QG QG = 25 nC TYP. +0.1 0.1max 1.27-0.1 Low on-state resistance +0.1 0.81-0.1 RDS(on) =0.83 MAX. (VGS =10 V, ID =5A) 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2Drain 3 Source

isc N-Channel MOSFET Transistor 2SK3712 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 580m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3716-Z FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

isc N-Channel MOSFET Transistor 2SK3714 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3716 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3715 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3711 FEATURES Drain Current I =70A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose app

isc N-Channel MOSFET Transistor 2SK3712-Z FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 580m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol