FKV550T - описание и поиск аналогов

FKV550T External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 50 V I = 100 A, V = 0V (BR)DSS D GS V 50 V DSS I 10 A V = 20V GSS GS V 20 V GSS I 100 A V = 50V, V = 0V DSS DS GS I 50 A D V 1.0 2.5 V V = 10V, I = 250 A TH DS D I 150

isc N-Channel MOSFET Transistor FKV550T FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 250 2SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

isc N-Channel MOSFET Transistor FKV550N FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR