Data Sheet10V Drive Nch MOSFET R6015ANZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) (2) (3)(1) Gate 0.9 Application (2) Drain 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkTypeC

10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.243) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.40.782.75.085) Parallel use is easy. (1) Gate(1) (2) (3)(2) Drain(3) SourceEach lead has same

R6015ANXNch 600V 15A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.3ID15APD(1)(2)(3) 50WFeatures Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead

R6015FNJDatasheetNch 600V 15A Power MOSFETlOutlinel LPT(S)VDSS 600VRDS(on)(Max.) 0.35 ID 15A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed to

R6015KNZDatasheetNch 600V 15A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.29 TO-3PFID15APD 60W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lAppl

R6015ENX Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.290WID15A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

Data Sheet10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Fast reverse recovery time (trr) 1.21.32) Low on-resistance.0.83) Fast switching speed.2.54 2.54 0.75 2.64) Gate-source voltage(1) (2) (3) VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel us

R6015ENZ Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.290WID15A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

R6015ENJ Nch 600V 15A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.290WID15A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-

isc N-Channel MOSFET Transistor R6015KNZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor R6015KNJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor R6015ENXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor R6015ENZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor R6015ENJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo