RTR020N05 - описание и поиск аналогов

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated

RTR020N05 RTR020N05FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR020N05 RTR020N05FRA Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead h

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Application

RTR020P02 Transistors Switching (-20V, -2.0A) RTR020P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 2.9 0.1 1.0MAX. 2) Built-in G-S Protection Diode. 0.85 0.1 0.4+0.1 -0.05 0.7 0.1 3) Small and Surface Mount Package (TSMT3). (3) Application 0 0.1 Power switching, DC / DC converter. (1) (2) 0.95 0.95 +0.1 0.16 -0.06 1.9 0.2 Each l

RTR020P02FRA RTR020P02 Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR020P02 RTR020P02FRA Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has

RTR020P02 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS