BUZ90A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUZ90A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 1050 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: TO220AB
BUZ90A Datasheet (PDF)
buz90a.pdf
BUZ 90 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 90 A 600 V 4 A 2 TO-220 AB C67078-S1321-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C 4Pulsed drain current IDpulsTC = 25 C 16Avalanche current,limited by Tjmax IAR 4.
buz90a.pdf
isc N-Channel Mosfet Transistor BUZ90AFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
buz90.pdf
BUZ 90SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 90 600 V 4.5 A 1.6 TO-220 AB C67078-S1321-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 4.5Pulsed drain current IDpulsTC = 25 C 18Avalanche current,limited by Tjmax IAR
buz905x4s buz906x4s.pdf
BUZ905X4SMAGNABUZ906X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) PCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.
buz902dp buz903dp.pdf
BUZ902DPMAGNABUZ903DPTECMECHANICAL DATADimensions in mmNCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.02.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION DIODES5.45 5.45 COMPLI
buz905p buz906p.pdf
BUZ905PMAGNABUZ906PTECMECHANICAL DATADimensions in mm (inches) PCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) PCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1
buz900dp buz901dp.pdf
BUZ900DPMAGNABUZ901DPTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 NCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D
buz907d buz908d.pdf
BUZ907DMAGNABUZ908DTECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROT
buz905-06.pdf
BUZ905MAGNABUZ906TECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING PCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANCEM
buz902d buz903d.pdf
BUZ902DMAGNABUZ903DTECMECHANICAL DATADimensions in mmNCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROT
buz905d buz906d.pdf
BUZ905DMAGNABUZ906DTECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING PCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC
buz907 buz908.pdf
BUZ907MAGNABUZ908TECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTEC
buz907dp buz908dp.pdf
BUZ907DPMAGNABUZ908DPTECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.02.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION DIODES5.45 5.45 COMPLI
buz900 buz901.pdf
BUZ900www.DataSheet4U.comMAGNABUZ901TECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY
buz900x4s buz901x4s.pdf
BUZ900X4SMAGNABUZ901X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.
buz905dp buz906dp.pdf
BUZ905DPMAGNABUZ906DPTECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 PCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D
buz900d buz901d.pdf
BUZ900DMAGNABUZ901DTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC
buz900p buz901p.pdf
BUZ900PMAGNABUZ901PTECMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) NCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1
buz902p buz903p.pdf
BUZ902PMAGNABUZ903PTECMECHANICAL DATADimensions in mmNCHANNEL4.69 (0.185) 15.49 (0.610) POWER MOSFET5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED0.79 (0.031) 2.87 (0.113)3.12 (0
buz907p buz908p.pdf
BUZ907PMAGNABUZ908PTECMECHANICAL DATADimensions in mmPCHANNEL4.69 (0.185) 15.49 (0.610) POWER MOSFET5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED0.79 (0.031) 2.87 (0.113)3.12 (0
buz902 buz903.pdf
BUZ902MAGNABUZ903TECMECHANICAL DATADimensions in mmNCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTEC
buz90.pdf
isc N-Channel Mosfet Transistor BUZ90FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source
buz901d.pdf
isc N-Channel MOSFET Transistor BUZ901DFEATURESDrain Current: I = 16A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Другие MOSFET... BUZ907 , BUZ907D , BUZ907DP , BUZ907P , BUZ908 , BUZ908D , BUZ908DP , BUZ908P , 2SK3918 , BUZ92 , BUZ94 , C2T204 , C2T205 , C2T206 , C2T211 , C2T212 , C2T213 .
History: HM30N10 | 2SK3046
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918