BUZ 90 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 90 A 600 V 4 A 2 TO-220 AB C67078-S1321-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C 4Pulsed drain current IDpulsTC = 25 C 16Avalanche current,limited by Tjmax IAR 4.

isc N-Channel Mosfet Transistor BUZ90AFEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

BUZ 90SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 90 600 V 4.5 A 1.6 TO-220 AB C67078-S1321-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 4.5Pulsed drain current IDpulsTC = 25 C 18Avalanche current,limited by Tjmax IAR

BUZ905X4SMAGNABUZ906X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) PCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.

BUZ902DPMAGNABUZ903DPTECMECHANICAL DATADimensions in mmNCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.02.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION DIODES5.45 5.45 COMPLI

BUZ905PMAGNABUZ906PTECMECHANICAL DATADimensions in mm (inches) PCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) PCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1

BUZ900DPMAGNABUZ901DPTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 NCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D

BUZ907DMAGNABUZ908DTECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROT

BUZ905MAGNABUZ906TECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING PCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANCEM

BUZ902DMAGNABUZ903DTECMECHANICAL DATADimensions in mmNCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROT

BUZ905DMAGNABUZ906DTECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING PCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

BUZ907MAGNABUZ908TECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTEC

BUZ907DPMAGNABUZ908DPTECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.02.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION DIODES5.45 5.45 COMPLI

BUZ900www.DataSheet4U.comMAGNABUZ901TECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY

BUZ900X4SMAGNABUZ901X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.

BUZ905DPMAGNABUZ906DPTECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 PCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D

BUZ900DMAGNABUZ901DTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

BUZ900PMAGNABUZ901PTECMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) NCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1

BUZ902PMAGNABUZ903PTECMECHANICAL DATADimensions in mmNCHANNEL4.69 (0.185) 15.49 (0.610) POWER MOSFET5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED0.79 (0.031) 2.87 (0.113)3.12 (0

BUZ907PMAGNABUZ908PTECMECHANICAL DATADimensions in mmPCHANNEL4.69 (0.185) 15.49 (0.610) POWER MOSFET5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED0.79 (0.031) 2.87 (0.113)3.12 (0

BUZ902MAGNABUZ903TECMECHANICAL DATADimensions in mmNCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTEC

isc N-Channel Mosfet Transistor BUZ90FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source

isc N-Channel MOSFET Transistor BUZ901DFEATURESDrain Current: I = 16A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA