Справочник MOSFET. SI2300

 

SI2300 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SI2300

Маркировка: C009T

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1.25 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Максимально допустимый постоянный ток стока (Id): 2.3 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 36 ns

Выходная емкость (Cd): 115 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm

Тип корпуса: SOT23

Аналог (замена) для SI2300

 

 

SI2300 Datasheet (PDF)

1.1. si2300ds.pdf Size:119K _vishay

SI2300
SI2300

New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Qg (Typ.) ID (A) Definition 0.068 at VGS = 4.5 V • TrenchFET® Power MOSFET 3.6a 30 3 nC • 100 % Rg Tested 0.085 at VGS = 2.5 V 3.4 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for

1.2. si2300.pdf Size:3364K _htsemi

SI2300
SI2300

SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter RE

 1.3. si2300.pdf Size:603K _kexin

SI2300
SI2300

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 (KI2300) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector A

1.4. si2300-3.pdf Size:725K _kexin

SI2300
SI2300

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET SI2300 (KI2300) SOT-23-3 Unit: mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A 3 VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol R

 1.5. si2300.pdf Size:2425K _shenzhen-tuofeng-semi

SI2300
SI2300

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 V DS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A V DS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A V DS=20V,,RDS(ON)=55m @V GS=2.5V,ID=2.0A 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emi

Другие MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 

 

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Список транзисторов

Обновления

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |
 

 

 

 
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