SI2300 datasheet, подбор замены

 ..1. Size:3364K  htsemi
 si2300.pdf 

SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millime

 ..2. Size:2425K  shenzhen
 si2300.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 V DS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A V DS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A V DS=20V,,RDS(ON)=55m @V GS=2.5V,ID=2.0A 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emi

 ..3. Size:206K  kexin
 si2300 ki2300.pdf 

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET SI2300 (KI2300) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS=20V 3 ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 ..4. Size:603K  kexin
 si2300.pdf 

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 (KI2300) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector A

 ..5. Size:780K  guangdong hottech
 si2300.pdf 

SI2300 LOW VOLTAGE MOSFET (N-CHANNEL) FEATURES Ultra low on-resistance V =20V,R =40m @V =4.5V,I =5A DS DS(ON) GS D For Low power DC to DC converter application For Load switch application Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Moisture Sensitivity Level 1

 ..6. Size:1505K  mdd
 si2300.pdf 

SI2300 SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Advanced Power MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 3 19.4m @ 4.5V 20V 6.2A 21.5m @ 3.3V 1. GATE 2. SOURCE 1 3. DRAIN 2 FEATURE APPLICATION Low RDS(on) @VGS=4.5V Load Switch DC/DC Converter 3.3V Logic Level Control Switching Circuits Power Management MARKING Equivalent circuit D 2300 G S

 ..7. Size:4294K  cn szxunrui
 si2300.pdf 

SOT-23 Plastic-Encapsulate MOSFETS SMD Type IC SMD Type MOSFET SI2300 N-Channel 20-V(D-S) MOSFET SI2300 V(BR)DSS RDS(on)MAX ID SOT-23 0.025 @10V 3 1.GATE 20V 6.0A 0.032 @4.5V 2.SOURCE 3.DRAIN 1 0.040 @2.5V 2 General FEATURE Equivalent Circuit MARKING TrenchFET Power MOSFET Lead free product is acquired Surface mount package C009T w APPLICATION Load Switc

 ..8. Size:691K  cn puolop
 si2300.pdf 

SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 70m RDS(ON), Vgs@ 2.5V, Ids@ 3.1A 80m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D SOT-23 G S Millimeter Millimeter R

 ..9. Size:2343K  cn yongyutai
 si2300.pdf 

SI2300 N-Channel 20-V(D-S) MOSFET ID SOT-23-3L V(BR)DSS RDS(on)MAX 40m @4.5V 20V 3A 1. GATE 75 m @2.5V 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 2300 Maximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Drain-Source Volta

 ..10. Size:682K  cn alj
 si2300.pdf 

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS SI2300 N-Channel 20V(D-S) MOSFET Features TrenchFET Power MOSFET Application Load Switch for Portable Devices DC/DC Converter 1. GATE Marking AOSHB 2. SOURCE 3. DRAIN Maximum Ratings (T =25 C unless otherwise noted) a Symbol Parameter Value Unit V Drain-source voltage 20 V DS

 ..11. Size:2506K  cn twgmc
 si2300.pdf 

SI2300 SI2301 Features VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A Equivalent Circuit MARKING 2300 3400 R 3400 1.GATE 2.SOURCE 3.DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source V

 0.1. Size:119K  vishay
 si2300ds.pdf 

New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.068 at VGS = 4.5 V TrenchFET Power MOSFET 3.6a 30 3 nC 100 % Rg Tested 0.085 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter for

 0.2. Size:725K  kexin
 si2300-3.pdf 

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET SI2300 (KI2300) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A 3 VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol R

 0.3. Size:715K  umw-ic
 si2300a.pdf 

R UMW UMW SI2300A N-Channel 20-V(D-S) MOSFET UMW SI2300A ID SOT-23 V(BR)DSS RDS(on)MAX 25m @4.5V 20V 6 A 1. GATE 34.5m @2.5V 2. SOURCE 3. DRAIN APPLICATION FEA TURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit C009T Maximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Dr

 0.4. Size:877K  cn vbsemi
 si2300ds-t1-ge3.pdf 

SI2300DS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 0.5. Size:877K  cn vbsemi
 si2300bds-t1-ge3.pdf 

SI2300BDS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/