SMG2328S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SMG2328S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 1.2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 19 ns
Выходная емкость (Cd): 29 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.31 Ohm
Тип корпуса: SC59
SMG2328S Datasheet (PDF)
smg2328s.pdf
SMG2328S 1.2A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION The SMG2328S utilized advanced processing ALtechniques to achieve the lowest possible on-resistance, 33extremely efficient and cost-effectiveness device. The
smg2328.pdf
SMG2328 100V, 250m, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2328 is universally used for all commercia
smg2328ne.pdf
SMG2328NE 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33applicati
smg2327p.pdf
SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high Acell density process.Low RDS(on) assures minimal power L3loss and conserves energy, making this device ideal for 3use in power man
smg2321p.pdf
SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize Ahigh cell density process. Low RDS(on) assures minimal L3power loss and conserves energy, making this device 3Top View C Bideal for use
smg2325p.pdf
SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure ALminimal power loss and heat dissipation. Typical applicati
smg2322n.pdf
SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) ALand to ensure minimal power loss and heat dissipation. 33Top View C B11 2
smg2329p.pdf
SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
smg2326n.pdf
SMG2326N 2.2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use ALin power management
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