SMG2370N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SMG2370N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.3 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 1.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 24 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.28 Ohm
Тип корпуса: SC59
SMG2370N Datasheet (PDF)
smg2370n.pdf
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SMG2370N 1.8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33
smg2371p.pdf
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SMG2371P -1A, -100V, RDS(ON) 1.2 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SC-59 Low RDS(on) trench technology. A Low thermal impedance. L3 Fast switching speed. 3Top View C B11 22K EAPPLICATIONS D PoE Power Sourcing Equipment H JF G
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SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
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SMG2334N 3.5A, 30V, RDS(ON) 60m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and AL to ensure minimal power loss and heat dissipation. 33Top View C B11 2
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SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high Acell density process.Low RDS(on) assures minimal power L3loss and conserves energy, making this device ideal for 3use in power man
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SMG2305-4.2A, -20V,RDS(ON) 65mElektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of -C specifies halogen & lead-freeDescriptionSC-59ADim Min MaxThe SMG2305 provide the designer with the best Lcombination of fast switching, low on-resistance A 2.70 3.103and cost-effectiveness. B 1.40 1.60SBTop View2 1
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SMG2343P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
smg2321p.pdf
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SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize Ahigh cell density process. Low RDS(on) assures minimal L3power loss and conserves energy, making this device 3Top View C Bideal for use
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SMG23023.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSC-59ADim Min MaxDescription LA 2.70 3.103B 1.40 1.60SBTop ViewThe SMG2302 provide the designer with the best 2 1C 1.00 1.30Combination of fast switching, low on-resistance D 0.35 0.50and
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SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. 33T
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SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power ALloss and heat dissipation. Typical applica
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SMG2330N 5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High ACell Density process. Low RDS(on) assures minimal power Lloss and conserves energy, making this device ideal for 33use
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SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS AThe SMG2310A utilized advanced processing techniques to achieve the Llowest possible on-resistance, extremely efficient and cost-effectiveness 33device. The SMG2310A is univers
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SMG2305P -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33Top
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SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure ALminimal power loss and heat dissipation. Typical applicati
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SMG2342NE 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and Ato ensure minimal power loss and heat dissipation. Typical L3applications
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SMG2391P -0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 FEATURES Low RDS(on) trench technology AL Low thermal impedance 33 Fast switching speed Top View C B11 22K EAPPLICATIONS D PoE Power Sourcing Equipment
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SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal ALpower loss and conserves energy, making this device 33ideal for use in
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SMG2306A 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all co
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SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss ALand heat dissipation. Typical applicat
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SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) ALand to ensure minimal power loss and heat dissipation. 33Top View C B11 2
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SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and ALconserves energy, making this device ideal for use in power
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SMG2336N 2.5 A, 30 V, RDS(ON) 32 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. AL33Top
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SMG2340NE 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure Aminimal power loss and heat dissipation. Typical applications L3ar
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SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell ADensity process. Low RDS(on) assures minimal power loss and Lconserves energy, making this device ideal for use in power 33
smg2328.pdf
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SMG2328 100V, 250m, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2328 is universally used for all commercia
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SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33applicat
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SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure ALminimal power loss and heat dissipation.Typical applications 33
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SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
smg2398n.pdf
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SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, ALmaking this device ideal for use in power
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SMG2326N 2.2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use ALin power management
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SMG2358N 2.8 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power ALloss and heat dissipation. Typical applicatio
smg2328ne.pdf
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SMG2328NE 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33applicati
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SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal ALpower loss and conserves energy, making this 33device ideal for use in power m
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SMG2306NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize ALHigh Cell Density process. Low RDS(on) assures 33minimal power loss and conserves energy, making Top View C Bthis device i
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SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33 Top View C B11
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SMG2301-2.6A, -20V,RDS(ON) 130m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & RoHS compliantSC-59ADim Min MaxDescription LA 2.70 3.103B 1.40 1.60The SMG2301 is universally preferred for all commercial SBTop View2 1C 1.00 1.30industrial surface mount application and suited for l
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SMG2343 -4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to Aprovide excellent on-resistance with low gate change. L3The device is suitable for use as a load switch or in PW
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SMG2342N 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss heat dissipation. Typical applications
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SMG2359P -1.6 A, -60 V, RDS(ON) 0.381 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
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SMG2339P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management ci
smg2302n.pdf
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SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33app
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SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation. 3Top View C
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SMG2340N 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and ensure ALminimal power loss and heat dissipation. Typical applications
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SMG2328S 1.2A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION The SMG2328S utilized advanced processing ALtechniques to achieve the lowest possible on-resistance, 33extremely efficient and cost-effectiveness device. The
smg2305l.pdf
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FM120-M WILLASSMG2305LTHRUP-Channel Enhancement Mode Power Mos.FETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rDescriptioneverse leakage current and thermal resistance. SOD-123HSC-59 Low profile surface mounted applic
smg2339p.pdf
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SMG2339Pwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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