Справочник MOSFET. SSF1320N

 

SSF1320N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF1320N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: SOT323

 Аналог (замена) для SSF1320N

 

 

SSF1320N Datasheet (PDF)

 ..1. Size:393K  secos
ssf1320n.pdf

SSF1320N
SSF1320N

SSF1320N 2A , 20V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation.

 8.1. Size:448K  secos
ssf1321p.pdf

SSF1320N
SSF1320N

SSF1321P -1.7A, -20V, RDS(on) 0.079 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low SOT-323RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.1. Size:393K  secos
ssf1331p.pdf

SSF1320N
SSF1320N

SSF1331P -1.5A, -30V, RDS(on) 0.112 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a SOT-323high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.2. Size:510K  silikron
ssf13n50.pdf

SSF1320N
SSF1320N

SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 o

 9.3. Size:533K  silikron
ssf13n50f.pdf

SSF1320N
SSF1320N

SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.4. Size:369K  silikron
ssf1341.pdf

SSF1320N
SSF1320N

SSF1341DDESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -12V,ID = -3.5A RDS(ON)

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