SSG4402N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSG4402N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 59 ns
Cossⓘ - Выходная емкость: 172 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
Тип корпуса: SOP8
SSG4402N Datasheet (PDF)
ssg4402n.pdf
SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
ssg4407p.pdf
SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use
ssg4462n.pdf
SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
ssg4499p.pdf
SSG4499P -6.8 A, -60 V, RDS(ON) 45 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES
ssg4480n.pdf
SSG4480N 7.1 A, 80 V, RDS(ON) 41 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. B Low thermal impedance. Fast switching speed. L DAPPLICATIONS M White LED boost converters A C Automotive Systems N I
ssg4435.pdf
SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal
ssg4410n.pdf
SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L Dmanagement in portable and battery-pow
ssg4470stm.pdf
SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. BPRODUCT SUMMARY PRODUCT SUMMARY L DVDSS(V) d RDS(on) m(Max ID(A)10@VGS= 10V M40 10 13@VGS= 4.5V A CNKJMARKING H G F EMillime
ssg4434n.pdf
SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L
ssg4492n.pdf
SSG4492N 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES L
ssg4490n.pdf
SSG4490N 5.2 A, 100 V, RDS(ON) 78 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal Bpower loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered
ssg4436n.pdf
SSG4436N 22A, 30V, RDS(ON) 4.6mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DFEATURES M
ssg4463p.pdf
SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in L Dp
Другие MOSFET... SSF84W , SSG0410 , SSG4224 , SSG4228 , SSG4362N , SSG4390N , SSG4392N , SSG4394N , IRFP260N , SSG4407P , SSG4410N , SSG4434N , SSG4435 , SSG4436N , SSG4462N , SSG4463P , SSG4470STM .
Список транзисторов
Обновления
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