SSG4490N
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSG4490N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5.2
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 9
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.078
Ohm
Тип корпуса:
SOP8
- подбор MOSFET транзистора по параметрам
SSG4490N
Datasheet (PDF)
..1. Size:144K secos
ssg4490n.pdf 

SSG4490N 5.2 A, 100 V, RDS(ON) 78 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal Bpower loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered
8.1. Size:168K secos
ssg4499p.pdf 

SSG4499P -6.8 A, -60 V, RDS(ON) 45 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES
8.2. Size:142K secos
ssg4492n.pdf 

SSG4492N 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES L
9.1. Size:142K secos
ssg4462n.pdf 

SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
9.2. Size:619K secos
ssg4480n.pdf 

SSG4480N 7.1 A, 80 V, RDS(ON) 41 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. B Low thermal impedance. Fast switching speed. L DAPPLICATIONS M White LED boost converters A C Automotive Systems N I
9.3. Size:657K secos
ssg4435.pdf 

SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal
9.4. Size:441K secos
ssg4410n.pdf 

SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L Dmanagement in portable and battery-pow
9.5. Size:542K secos
ssg4407p.pdf 

SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use
9.6. Size:822K secos
ssg4470stm.pdf 

SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. BPRODUCT SUMMARY PRODUCT SUMMARY L DVDSS(V) d RDS(on) m(Max ID(A)10@VGS= 10V M40 10 13@VGS= 4.5V A CNKJMARKING H G F EMillime
9.7. Size:475K secos
ssg4434n.pdf 

SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L
9.8. Size:596K secos
ssg4402n.pdf 

SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
9.9. Size:613K secos
ssg4436n.pdf 

SSG4436N 22A, 30V, RDS(ON) 4.6mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DFEATURES M
9.10. Size:620K secos
ssg4463p.pdf 

SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in L Dp
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