Справочник MOSFET. AS2306

 

AS2306 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AS2306
   Маркировка: A6
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 4 A
   Максимальная температура канала (Tj): 150 °C
   Время включения (ton): 8 ns
   Выходная емкость (Cd): 120 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для AS2306

 

 

AS2306 Datasheet (PDF)

 ..1. Size:1783K  anbon
as2306.pdf

AS2306
AS2306

AS2306 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: A6 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 20 VDSS-

 9.1. Size:1817K  anbon
as2302.pdf

AS2306
AS2306

AS2302 N-Channel 20V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: A2 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBVDSS 20 V-

 9.2. Size:2103K  anbon
as2304.pdf

AS2306
AS2306

N-Channel 30V(D-S) MOSFET AS2304 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0

 9.3. Size:2210K  anbon
as2308.pdf

AS2306
AS2306

AS2308 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.9

 9.4. Size:1837K  anbon
as2305.pdf

AS2306
AS2306

P-Channel MOSFET AS2305SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: A5 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV -20 VDSS-

 9.5. Size:761K  anbon
as2309.pdf

AS2306
AS2306

AS2309 P-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 180m@-10V -60V -1.7A 270m@-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 18P6 Document ID Issued Date Revised Date Revision Page

 9.6. Size:678K  anbon
as2300.pdf

AS2306
AS2306

AS2300 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 32m@2.5V 4.5A 49m@1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S0. Document ID Issued Date Revised Date Revision

 9.7. Size:1796K  anbon
as2301.pdf

AS2306
AS2306

AS2301 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: A1 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBVDSS -20 V-

 9.8. Size:2062K  anbon
as2303.pdf

AS2306
AS2306

AS2303 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.9

 9.9. Size:1915K  anbon
as2307.pdf

AS2306
AS2306

P-Channel MOSFET AS2307SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING: B 1 1Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage- BV

 9.10. Size:3K  fms
as2301.txt

AS2306

 9.11. Size:400K  fms
as2302.pdf

AS2306

 9.12. Size:20K  fms
as2301 0002.jpg

AS2306

 9.13. Size:2K  fms
as2302.txt

AS2306

 9.14. Size:9K  fms
as2301 0001.jpg

AS2306

 9.15. Size:20K  fms
as2302 0002.jpg

AS2306

 9.16. Size:419K  fms
as2301.pdf

AS2306

 9.17. Size:9K  fms
as2302 0001.jpg

AS2306

Другие MOSFET... F5031 , F5032 , F5033 , F5038H , FA38SA50LC , FA57SA50LC , FB180SA10 , AO3423B , K3569 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , FDB6030L , FDB6035AL , FDB6035L .

 

 
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