STT3402N - описание и поиск аналогов

STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density A E process. Low RDS(on) assures minimal power loss and conserves energy, L making this device ideal for use in powe

STT3405P -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal E L power loss and conserves energy, making this device 6 5 4 ideal fo

STT3434N 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 Typical

STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free KEY FEATURES TSOP-6 Low RDS(on) trench technology. A E Low thermal impedance. L Fast switching speed. 6 5 4 TYPICAL APPLICATIONS B White LED boost converters. Automotive S

STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A High Cell Density process. Low RDS(on) assures minimal E L power loss and conserves energy, making this device 6 5 4 ideal for use

STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a High Cell Density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 Typ

STT3457P -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 Typica

STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density A trench process to provide low RDS(on) and to ensure minimal power E L loss and heat dissipation. Typical applica

STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 FEATURES

STT3463P -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal E L power loss and conserves energy, making this device 6 5 4 ideal

Green Product STT3418 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 39 @ VGS=10V 30V 5A Surface Mount Package. 63 @ VGS=4.5V D D G G D S STT SERIES S SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25 C

Gre r r P Pr Pr Pro STT3414 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 33 @ VGS=10V Surface Mount Package. 30V 7A 42 @ VGS=4.5V 57 @ VGS=2.5V D D D G G G D D S S STT SERIES S SOT-223 (