4N60D - описание и поиск аналогов

4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

STF24N60DM2 N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features VDS @ RDS(on) Order code ID TJmax max STF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 3 2 1 capacitance TO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB VDS @ RDS(on) 2 Order codes ID 3 TJmax max 1 3 STB24N60DM2 D2PAK 2 1 STP24N60DM2 650 V 0.20 18 A TO-220 STW24N60DM2 Extremely low gate charge and input capacitance 3 2

HGTG24N60D1D Typical Performance Curves (Continued) 1300 TJ = +150oC, TC = +100oC, RGE = 25 , L = 500 H 80 1200 VCE = 480V, VGE = 10V 1100 VCE = 480V, VGE = 15V 1000 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF 900 PC = DUTY FACTOR = 50% 10 800 R JC = 1.0oC/W VCE = 240V, VGE = 10V 700 VCE = 240V, VGE = 15V 600 VCE = 480V, VGE = 10V, 15V 500 TJ = +150oC VCE = 240V, VG

KF4N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANNEL POWER MOSFET SIF4N60D N- MOS / N-CHANN

SSF4N60D Main Product Characteristics VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

FTP04N60D FTA04N60D N-Channel MOSFET Pb Lead Free Package and Finish Applications VDSS RDS(ON) (Max.) ID Adaptor Charger 600 V 2.2 4.0 A SMPS Standby Power Features D RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves G G G Ordering Information DS DS TO-220F TO-220 S PART N

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

HY4N60D / HY4N60M 600V / 4.0A 600V, RDS(ON)=2.4 @VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 2 1 1 D G 2 In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mec

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 600V ID 4A High ruggedness RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 1 2 1 2 100% Avalanche Tested 2 3 3 Application LED,Charge 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produce

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS 600V Features TO-220F TO-251N TO-252 ID 4A High ruggedness RDS(ON) 2.2 RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 2 1 1 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 1 2 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche Tested Application A

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application LED,Charger 1 1. Gate 2. Drain 3. Source 3 General Descrip

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N60F,CS4N60P,CS4N60U,CS4N60D 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N60F TO-220F

CSFR4N60F,CSFR4N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR4N60U,CSFR4N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Ma

FuXin Semiconductor Co., Ltd. FXN4N60D Series Rev.A General Description Features The FXN4N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

4N60 Series N-Channel MOSFET 4A, 600V, N H FQU4N60C H4N60U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 4N60 FQD4N60C H4N60D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N60 Series Pin Assignment APPLICATION ID=4A