FDB7045L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDB7045L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 1092 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO263AB
- подбор MOSFET транзистора по параметрам
FDB7045L Datasheet (PDF)
fdp7045l fdb7045l.pdf

March 2004FDP7045L/FDB7045LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 100 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 6.0 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf

July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0120 @ VGS = 4.5 V.converters using either synchronous or conventional Critical DC electrical parameters spec
fdp7030bl fdb7030bl .pdf

October 2003FDP7030BL/FDB7030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 12 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec
fdb7030l l86z.pdf

June 2003FDP7030L / FDB7030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 80A, 30 V RDS(ON) = 7 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 10 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electric
Другие MOSFET... FDB6030BL , FDB6030L , FDB6035AL , FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , RFP50N06 , FDB8030L , AS3401 , FDC5612 , FDC6301N , FDC6302P , FDC6303N , FDC6304P , FDC6305N .
History: IRF241 | NCE70T180D
History: IRF241 | NCE70T180D



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet | 2sc3281 datasheet | 2sa1106