Справочник MOSFET. CEB6036

 

CEB6036 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CEB6036

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 167 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 135 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 138 nC

Время нарастания (tr): 23 ns

Выходная емкость (Cd): 450 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0046 Ohm

Тип корпуса: TO263

Аналог (замена) для CEB6036

 

 

CEB6036 Datasheet (PDF)

1.1. cep6036 ceb6036.pdf Size:421K _cet

CEB6036
CEB6036

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwi

4.1. cep603al ceb603al.pdf Size:520K _upd-mosfet

CEB6036
CEB6036



 5.1. cep6060n ceb6060n.pdf Size:420K _cet

CEB6036
CEB6036

CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramet

5.2. cep60n06g ceb60n06g.pdf Size:439K _cet

CEB6036
CEB6036

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Param

 5.3. cep6042 ceb6042.pdf Size:421K _cet

CEB6036
CEB6036

CEP6042/CEB6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 118A, RDS(ON) = 5m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

5.4. cep6086l ceb6086l.pdf Size:434K _cet

CEB6036
CEB6036

CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m? @VGS = 10V. RDS(ON) = 13.5m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM

 5.5. cep6086 ceb6086.pdf Size:413K _cet

CEB6036
CEB6036

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramete

5.6. cep6056 ceb6056.pdf Size:629K _cet

CEB6036
CEB6036

CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramet

5.7. cep6060l ceb6060l.pdf Size:399K _cet

CEB6036
CEB6036

CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m? @VGS = 10V. RDS(ON) = 25m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C un

5.8. cep60n10 ceb60n10.pdf Size:395K _cet

CEB6036
CEB6036

CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Param

Другие MOSFET... CEB3120 , CEB3205 , CEB4060A , CEB4060AL , CEB45N10 , CEB50N10 , CEB540L , CEB540N , IRF1404 , CEB6042 , CEB6056 , CEB6060L , CEB6060N , CEB6086L , CEB60N06G , CEB60N10 , CEB6186 .

 

 
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MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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