CEP6086 - параметры транзистора MOSFET, его аналоги, datasheet

CEP6086 Datasheet (PDF)

..1. Size:418K cet
cep6086 ceb6086.pdf pdf_icon

CEP6086/CEB6086N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 70A, RDS(ON) = 9.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPar

0.1. Size:434K cet
cep6086l ceb6086l.pdf pdf_icon

CEP6086L/CEB6086LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE

8.1. Size:493K ncepower
ncep6080ag.pdf pdf_icon

Pb Free Product http://www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

8.2. Size:412K ncepower
ncep6080g.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCEP6080GNCE N-Channel Super Trench Power MOSFET Description The NCEP6080G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .