CEB840L - параметры транзистора MOSFET, его аналоги, datasheet

CEB840L Datasheet (PDF)

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CEP840L/CEB840L CEF840LN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP840L 500V 0.8 8A 10VCEB840L 500V 0.8 8A 10VCEF840L 500V 0.8 8A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(

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CEP840A/CEB840ACEF840APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP840A 500V 0.85 8.5A 10VCEB840A 500V 0.85 8.5A 10VCEF840A 500V 0.85 8.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF

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CEP840G/CEB840G CEF840GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP840G 500V 0.85 8A 10VCEB840G 500V 0.85 8A 10VCEF840G 500V 0.85 8A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-2

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CEP84A4/CEB84A4N-Channel Enhancement Mode Field Effect Transistor FEATURES40V, 90A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .