CED01N65 - параметры транзистора MOSFET, его аналоги, datasheet

CED01N65 Datasheet (PDF)

..1. Size:395K cet
ceu01n65 ced01n65.pdf pdf_icon

CED01N65/CEU01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

0.1. Size:393K cet
ceu01n65a ced01n65a.pdf pdf_icon

CED01N65A/CEU01N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.9A, RDS(ON) = 15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

7.1. Size:408K cet
ced01n6g ceu01n6g.pdf pdf_icon

CED01N6G/CEU01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1A, RDS(ON) = 9.3 @VGS = 10V.High power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.DGDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

8.1. Size:415K cet
ced01n7 ceu01n7.pdf pdf_icon

CED01N7/CEU01N7N-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 0.8A, RDS(ON) = 18 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

Другие MOSFET... CEP84A4 , CEP85A3 , CEP85N75 , CEP85N75V , CEP9060N , CEP93A3 , CEBF634 , CEBF640 , IRFZ44N , CED01N65A , CED01N6G , CED01N7 , CED02N65A , CED02N65G , CED02N6A , CED02N6G , CED02N7G .