CED6086 - параметры транзистора MOSFET, его аналоги, datasheet

CED6086 Datasheet (PDF)

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CED6086/CEU6086N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A, RDS(ON) = 8.7m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

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CED6060N/CEU6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 34A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

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ced6042.pdf pdf_icon

CED6042/CEU6042N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES60V, 90A , RDS(ON) = 5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc =

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ceu6056 ced6056.pdf pdf_icon

CED6056/CEU6056N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 76A , RDS(ON) = 6.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .