CEU830G - параметры транзистора MOSFET, его аналоги, datasheet

CEU830G Datasheet (PDF)

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CED830G/CEU830GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES500V, 4.5A, RDS(ON) = 1.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25

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CED83A3G/CEU83A3GN-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 93A, RDS(ON) = 4.2m @VGS = 10V. RDS(ON) = 6.2m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

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CED83A3/CEU83A3N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 80A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM R

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .