CEM3032 - параметры транзистора MOSFET, его аналоги, datasheet

CEM3032 Datasheet (PDF)

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cem3032.pdf pdf_icon

CEM3032N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

9.1. Size:617K cet
cem3083.pdf pdf_icon

CEM3083P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

9.2. Size:385K cet
cem3053.pdf pdf_icon

CEM3053P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package. ESD Protected: 4000 VSO-81 2 3 41 S S S GABSOLUT

9.3. Size:418K cet
cem3060.pdf pdf_icon

CEM3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .