Справочник MOSFET. CEM3109

 

CEM3109 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEM3109
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10(8) A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12.2 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 170(255) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014(0.02) Ohm
   Тип корпуса: SO8

 Аналог (замена) для CEM3109

 

 

CEM3109 Datasheet (PDF)

 ..1. Size:615K  cet
 cem3109.pdf

CEM3109 CEM3109

CEM3109Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARYFEATURES30V, 10A, RDS(ON) = 14m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V.-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.

 9.1. Size:505K  cet
 cem3138.pdf

CEM3109 CEM3109

CEM3138Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 9.1A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V.30V, 6.9A, RDS(ON) = 26m @VGS = 10V. RDS(ON) = 35m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mount Pac

 9.2. Size:372K  cet
 cem3172.pdf

CEM3109 CEM3109

CEM3172N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 8.9A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis

 9.3. Size:387K  cet
 cem3120.pdf

CEM3109 CEM3109

CEM3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 10A, RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

 9.4. Size:387K  cet
 cem3178.pdf

CEM3109 CEM3109

CEM3178PRELIMINARYDual N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS T

 9.5. Size:273K  cet
 cem3128.pdf

CEM3109 CEM3109

CEM3128Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 9A, RDS(ON) = 16m @VGS = 10V. RDS(ON) = 23m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 9.6. Size:882K  cn vbsemi
 cem3128.pdf

CEM3109 CEM3109

CEM3128www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

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