CES2336 - описание и поиск аналогов

 ..1. Size:635K  cet
 ces2336.pdf 

CES2336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.8A, RDS(ON) = 250m @VGS = 10V. RDS(ON) = 330m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Dra

 8.1. Size:389K  cet
 ces2331.pdf 

CES2331 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.2A, RDS(ON) = 48m @VGS = -4.5V. RDS(ON) = 60m @VGS = -2.5V. RDS(ON) = 78m @VGS = -1.8V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Paramete

 8.2. Size:869K  cn vbsemi
 ces2331.pdf 

CES2331 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

 9.1. Size:493K  cet
 ces2307.pdf 

CES2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

 9.2. Size:395K  cet
 ces2301.pdf 

CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100m @VGS = -4.5V. RDS(ON) = 150m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sou

 9.3. Size:405K  cet
 ces2302.pdf 

CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72m @VGS = 4.5V. RDS(ON) = 110m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source V

 9.4. Size:132K  cet
 ces2303.pdf 

CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.9A, RDS(ON) = 150m (typ) @VGS = -10V. RDS(ON) = 230m (typ) @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units

 9.5. Size:361K  cet
 ces2342.pdf 

CES2342 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 4.6A, RDS(ON) = 37m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

 9.6. Size:156K  cet
 ces2308.pdf 

CES2308 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 5.4A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 36m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drai

 9.7. Size:919K  cet
 ces2322.pdf 

CES2322 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 6.2A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units

 9.8. Size:560K  cet
 ces2306.pdf 

CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V. RDS(ON) = 100m @VGS = 1.8V. High dense cell design for extremely low RDS(ON). D Lead free product is acquired. Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Sy

 9.9. Size:387K  cet
 ces2323.pdf 

CES2323 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.2A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

 9.10. Size:390K  cet
 ces2317.pdf 

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Par

 9.11. Size:156K  cet
 ces2308(esd).pdf 

CES2308 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 5.4A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 36m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drai

 9.12. Size:141K  cet
 ces2316.pdf 

CES2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vol

 9.13. Size:424K  cet
 ces2307a.pdf 

CES2307A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain

 9.14. Size:1084K  cet
 ces2310.pdf 

CES2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C u

 9.15. Size:275K  cet
 ces2312.pdf 

CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vo

 9.16. Size:597K  cet
 ces2313.pdf 

CES2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

 9.17. Size:139K  cet
 ces2314.pdf 

CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 70m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

 9.18. Size:453K  cet
 ces2324.pdf 

CES2324 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.2A, RDS(ON) = 45m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vo

 9.19. Size:423K  cet
 ces2362.pdf 

CES2362 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 3A, RDS(ON) = 80m @VGS = 10V. RDS(ON) = 100m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

 9.20. Size:265K  cet
 ces2305.pdf 

CES2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4A, RDS(ON) = 55m @VGS = -10V. RDS(ON) = 70m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

 9.21. Size:409K  cet
 ces2313a.pdf 

CES2313A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.8A, RDS(ON) = 55m @VGS = -10V. RDS(ON) = 86m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

 9.22. Size:133K  cet
 ces2309.pdf 

CES2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -2.2A, RDS(ON) = 165m @VGS = -4.5V. RDS(ON) = 300m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Unit

 9.23. Size:365K  cet
 ces2321a.pdf 

CES2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 75m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit

 9.24. Size:378K  cet
 ces2321.pdf 

CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

 9.25. Size:478K  cet
 ces2320.pdf 

CES2320 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.2A, RDS(ON) = 29m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vol

 9.26. Size:870K  cn vbsemi
 ces2307.pdf 

CES2307 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

 9.27. Size:870K  cn vbsemi
 ces2301.pdf 

CES2301 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 9.28. Size:1706K  cn vbsemi
 ces2302.pdf 

CES2302 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

 9.29. Size:1675K  cn vbsemi
 ces2314.pdf 

CES2314 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

 9.30. Size:1706K  cn vbsemi
 ces2324.pdf 

CES2324 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

 9.31. Size:864K  cn vbsemi
 ces2362.pdf 

CES2362 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1

 9.32. Size:871K  cn vbsemi
 ces2321.pdf 

CES2321 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS