March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 N-Channel logic level enhancement mode 2.2 A, 30 V, RDS(ON) = 0.065 @ VGS = 4.5 Vpower field effect transistors are produced using Fairchild'sRDS(ON) = 0.082 @ VGS = 2.5 V. proprietary, high cell density, DMOS technology. This veryIndustry standard

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDN337NN-Channel Enhancement Mode MOSFETFeature 20V/3.0A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . SOT-23 Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25 Unl

FDN337N-NLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

January 2005 FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced 1.3 A, 20 V. RDS(ON) = 0.20 @ VGS = 4.5 V using Fairchild Semiconductors advanced RDS(ON) = 0.27 @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (3.6 nC typical

November 1999FDN339ANN-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchprocess that has been especially tailored to minimize the RDS(ON) = 0.050 @ VGS = 2.5 V.on-state resistance and y

April 1999FDN335NN-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 VThis N-Channel 2.5V specified MOSFET is producedusing Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.100 @ VGS = 2.5 V.process that has been especially tailored to minimize theon-state resistance and yet maintain low gate cha

September 2001 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switchi

November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description FeaturesThis P-Channel 2.5V specified MOSFET is produced -1.3 A, -20 V. RDS(ON) = 0.20 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.27 @ VGS= -2.5 V. process that has been especially tailored to minimize theLow gate charge (3.6 nC typical).

FDN335NN-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 VThis N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.100 @ VGS = 2.5 V.process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Lo

November 2013FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GSFairchilds advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GSIt has been optimized for battery power management applications. Fast switching

FDN335N20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00

FDN338P20V P-Channel Enhancement Mode MOSFET VDS= -20V 115mRDS(ON), Vgs@-4.5V, Ids@-1.6A= RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDN338 FDN338 P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSOT-23 P-Channel logic level enhancement mode -1.6 A, -20 V, RDS(ON) = 0.115 @ VGS = -4.5 Vpower field effect transistors are produced using Fairchild's RDS(ON) = 0.155 @ VGS = -2.5 V. proprietary, high cell density,

SMD Type MOSFETP-Channel Enhancement MOSFETFDN336P FeaturesSOT-23Unit: mm2.9+0.1-0.1 VDS (V) =-20V+0.10.4 -0.1 RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)12+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VDS -20VGate-Source

RUMW UMW FDN335NMOSFETSSOT-23 Plastic-Encapsulate FDN335N N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID70m@ 4.5V20 V1.7A100m@ 2.5VFEATUREAPPLICATION TrenchFET Power MOSFET Battery protection SOT23 Supper high density cell design Load switch Battery management MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ra

RUMW UMW FDN338PUMW FDN338PSOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN338SOT23 IDV(BR)DSS RDS(on)MAX 112m@-4.5V-20VA-2.8142m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zzLoad Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit 338Maximum ratings (Ta=25 u

FDN335N N-Ch 20V Fast Switching MOSFETs Product Summary Description The FDN335N is the high cell density trenched V 20 V DSN-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small R 46 m DS(ON),typpower switching and load switch applications. I 3 A DThe FDN335N meets the RoHS and Green Product requirement with full function reliability

FDN338P P-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN338P is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 89 m and load switch applications. ID -3 A The FDN338P meet the RoHS and Green Product requirement with full function reliability approved.

FDN336P P-Channel Enhancement Mode MOSFETFeature -20V/-2A, RDS(ON) = 120m(MAX) @VGS = -4.5V. DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems. AT =25 Unless Otherwise noted Ab

FDN335NN-Channel Enhancement Mode MOSFETFeature 20V/2.0A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. S O T - 2 3 Absolute Maximum Ratings TA

FDN335N-NLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

FDN338P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI