Справочник MOSFET. CEP30P03

 

CEP30P03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEP30P03
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 24 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO220

 Аналог (замена) для CEP30P03

 

 

CEP30P03 Datasheet (PDF)

 ..1. Size:394K  cet
 cep30p03 ceb30p03.pdf

CEP30P03 CEP30P03

CEP30P03/CEB30P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -30A, RDS(ON) =32m @VGS = -10V.RDS(ON) =50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

 8.1. Size:602K  ncepower
 ncep30p90k.pdf

CEP30P03 CEP30P03

http://www.ncepower.com NCEP30P90KNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP30P90K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

 8.2. Size:325K  ncepower
 ncep30pt16g.pdf

CEP30P03 CEP30P03

http://www.ncepower.com NCEP30PT16GNCE P-Channel Super Trench Power MOSFET Description General Features The NCEP30PT16G uses Super Trench technology that is VDS =-30V,ID =-160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=3.3m (typical) @ VGS=-4.5V losse

 8.3. Size:332K  ncepower
 ncep30p90g.pdf

CEP30P03 CEP30P03

http://www.ncepower.com NCEP30P90GNCE P-Channel Super Trench Power MOSFET Description The NCEP30P90G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STF19NM50N | FRM244R

 

 
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