CEP30P03. Аналоги и основные параметры

Наименование производителя: CEP30P03

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 220 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm

Тип корпуса: TO220

Аналог (замена) для CEP30P03

- подборⓘ MOSFET транзистора по параметрам

 

CEP30P03 даташит

 ..1. Size:394K  cet
 cep30p03 ceb30p03.pdf pdf_icon

CEP30P03

CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32m @VGS = -10V. RDS(ON) =50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc

 8.1. Size:602K  ncepower
 ncep30p90k.pdf pdf_icon

CEP30P03

http //www.ncepower.com NCEP30P90K NCE P-Channel Super Trench Power MOSFET Description The NCEP30P90K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

 8.2. Size:325K  ncepower
 ncep30pt16g.pdf pdf_icon

CEP30P03

http //www.ncepower.com NCEP30PT16G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP30PT16G uses Super Trench technology that is VDS =-30V,ID =-160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=3.3m (typical) @ VGS=-4.5V losse

 8.3. Size:332K  ncepower
 ncep30p90g.pdf pdf_icon

CEP30P03

http //www.ncepower.com NCEP30P90G NCE P-Channel Super Trench Power MOSFET Description The NCEP30P90G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CEM9953A, CEN2301, CEP05P03, CEP12P10, CEP14P20, CEP15P15, CEP20P06, CEP20P10, IRFP064N, CEP35P10, CEP50P03, CEP6601, CEP95P04, CES2301, CES2303, CES2305, CES2307