Справочник MOSFET. KTK5162S

 

KTK5162S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KTK5162S
   Маркировка: KF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.4 V
   Максимально допустимый постоянный ток стока |Id|: 0.1 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 21 ns
   Выходная емкость (Cd): 4.4 pf
   Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для KTK5162S

 

 

KTK5162S Datasheet (PDF)

 ..1. Size:41K  kec
ktk5162s.pdf

KTK5162S
KTK5162S

KTK5162SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERSHigh Speed. _+A 2.93 0.20B 1.30+0.20/-0.15Small Package. C 1.30 MAX23Enhancement-Mode.D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K0.00 ~ 0.10P P

 8.1. Size:42K  kec
ktk5164u.pdf

KTK5162S
KTK5162S

KTK5164USEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES M B MDIM MILLIMETERS2.5 Gate Drive._A 2.00 0.20+D2Low Threshold Voltage : Vth=0.51.5V. _B 1.25 + 0.15_+C 0.90 0.10High Speed. 31D 0.3+0.10/-0.05_E 2.10 + 0.20Small Package. G 0.65

 8.2. Size:398K  kec
ktk5164s.pdf

KTK5162S
KTK5162S

KTK5164SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme

 9.1. Size:428K  kec
ktk5131e.pdf

KTK5162S
KTK5162S

KTK5131ESEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES BDIM MILLIMETERS2.5 Gate Drive._+A 1.60 0.10DLow Threshold Voltage : Vth=0.51.5V. _+2 B 0.85 0.10_+C 0.70 0.10High Speed. 31D 0.27+0.10/-0.05_Small Package. E 1.60 0.10+_+1.00

 9.2. Size:85K  kec
ktk5132v.pdf

KTK5162S
KTK5162S

KTK5132VSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES B2.5 Gate Drive.Low Threshold Voltage : Vth=0.5 1.5V.DIM MILLIMETERS2_High Speed. A 1.2 + 0.05_+B 0.8 0.05Small Package. 13 _C 0.5 + 0.05_+D 0.3 0.05Enhancement-Mode._+E 1.2 0.05_G 0.8 + 0.

 9.3. Size:428K  kec
ktk5132e.pdf

KTK5162S
KTK5162S

KTK5132ESEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES BDIM MILLIMETERS2.5 Gate Drive._+A 1.60 0.10DLow Threshold Voltage : Vth=0.51.5V. _+2 B 0.85 0.10_+C 0.70 0.10High Speed. 31D 0.27+0.10/-0.05_Small Package. E 1.60 0.10+_+1.00

 9.4. Size:47K  kec
ktk5132u.pdf

KTK5162S
KTK5162S

KTK5132USEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES M B MDIM MILLIMETERS2.5 Gate Drive._A 2.00 0.20+D2Low Threshold Voltage : Vth=0.51.5V. _B 1.25 + 0.15_+C 0.90 0.10High Speed. 31D 0.3+0.10/-0.05_E 2.10 + 0.20Small Package. G 0.65

 9.5. Size:435K  kec
ktk5134s.pdf

KTK5162S
KTK5162S

KTK5134SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme

 9.6. Size:440K  kec
ktk5131s.pdf

KTK5162S
KTK5162S

KTK5131SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme

 9.7. Size:342K  kec
ktk5133s.pdf

KTK5162S
KTK5162S

KTK5133SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme

 9.8. Size:84K  kec
ktk5131v.pdf

KTK5162S
KTK5162S

KTK5131VSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES B2.5 Gate Drive.Low Threshold Voltage : Vth=0.5 1.5V.DIM MILLIMETERS2_High Speed. A 1.2 + 0.05_+B 0.8 0.05Small Package. 13 _C 0.5 + 0.05_+D 0.3 0.05Enhancement-Mode._+E 1.2 0.05_G 0.8 + 0.

 9.9. Size:430K  kec
ktk5132s.pdf

KTK5162S
KTK5162S

KTK5132SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.51.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95

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