KTK5164S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KTK5164S
Маркировка: KM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 40 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: SOT23
KTK5164S Datasheet (PDF)
ktk5164s.pdf
KTK5164SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme
ktk5164u.pdf
KTK5164USEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES M B MDIM MILLIMETERS2.5 Gate Drive._A 2.00 0.20+D2Low Threshold Voltage : Vth=0.51.5V. _B 1.25 + 0.15_+C 0.90 0.10High Speed. 31D 0.3+0.10/-0.05_E 2.10 + 0.20Small Package. G 0.65
ktk5162s.pdf
KTK5162SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERSHigh Speed. _+A 2.93 0.20B 1.30+0.20/-0.15Small Package. C 1.30 MAX23Enhancement-Mode.D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K0.00 ~ 0.10P P
ktk5131e.pdf
KTK5131ESEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES BDIM MILLIMETERS2.5 Gate Drive._+A 1.60 0.10DLow Threshold Voltage : Vth=0.51.5V. _+2 B 0.85 0.10_+C 0.70 0.10High Speed. 31D 0.27+0.10/-0.05_Small Package. E 1.60 0.10+_+1.00
ktk5132v.pdf
KTK5132VSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES B2.5 Gate Drive.Low Threshold Voltage : Vth=0.5 1.5V.DIM MILLIMETERS2_High Speed. A 1.2 + 0.05_+B 0.8 0.05Small Package. 13 _C 0.5 + 0.05_+D 0.3 0.05Enhancement-Mode._+E 1.2 0.05_G 0.8 + 0.
ktk5132e.pdf
KTK5132ESEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES BDIM MILLIMETERS2.5 Gate Drive._+A 1.60 0.10DLow Threshold Voltage : Vth=0.51.5V. _+2 B 0.85 0.10_+C 0.70 0.10High Speed. 31D 0.27+0.10/-0.05_Small Package. E 1.60 0.10+_+1.00
ktk5132u.pdf
KTK5132USEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES M B MDIM MILLIMETERS2.5 Gate Drive._A 2.00 0.20+D2Low Threshold Voltage : Vth=0.51.5V. _B 1.25 + 0.15_+C 0.90 0.10High Speed. 31D 0.3+0.10/-0.05_E 2.10 + 0.20Small Package. G 0.65
ktk5134s.pdf
KTK5134SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme
ktk5131s.pdf
KTK5131SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme
ktk5133s.pdf
KTK5133SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.5 1.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95Enhanceme
ktk5131v.pdf
KTK5131VSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EFEATURES B2.5 Gate Drive.Low Threshold Voltage : Vth=0.5 1.5V.DIM MILLIMETERS2_High Speed. A 1.2 + 0.05_+B 0.8 0.05Small Package. 13 _C 0.5 + 0.05_+D 0.3 0.05Enhancement-Mode._+E 1.2 0.05_G 0.8 + 0.
ktk5132s.pdf
KTK5132SSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EL B LFEATURES DIM MILLIMETERS2.5 Gate Drive._+A 2.93 0.20B 1.30+0.20/-0.15Low Threshold Voltage : Vth=0.51.5V.C 1.30 MAX23High Speed. D 0.45+0.15/-0.05E 2.40+0.30/-0.20Small Package. 1G 1.90H 0.95
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918