Справочник MOSFET. KMA2D7DP20X

 

KMA2D7DP20X Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: KMA2D7DP20X
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TSOP6
 

 Аналог (замена) для KMA2D7DP20X

   - подбор ⓘ MOSFET транзистора по параметрам

 

KMA2D7DP20X Datasheet (PDF)

 ..1. Size:421K  kec
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KMA2D7DP20X

SEMICONDUCTOR KMA2D7DP20XTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.AGFEATURES 6 4 CVDSS=-20V, ID=-2.7A.FB1 B F1Drain-Source ON Resistance.1 3: RDS(ON)=100m (Max.) @ VGS=-4.5V.DIM MILLIMETERS: RDS(ON)=175m (Max.) @ VGS=-2.5V._3.05 + 0.1AE_2.85 + 0.15B_1

 9.1. Size:50K  kec
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KMA2D7DP20X

SEMICONDUCTOR KMA2D8P20XTECHNICAL DATA P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for battery pack or power management in cell phone,and PDA.DHFEATURES JVDSS=-20V, ID=-2.8A.EDrain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=90m(Max.) @ VGS=-4.5VA_3.00 0.15A +F: RDS(ON)=150m(Max.) @ VGS=-2.5V _1.65 0.1+B_+2.85 0.2C

 9.2. Size:418K  kec
kma2d0dp20x.pdfpdf_icon

KMA2D7DP20X

SEMICONDUCTOR KMA2D0DP20XTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.AF6 4 CB1 B EFEATURES 1 3VDSS=-20V, ID=-2.0A.DIM MILLIMETERSDrain-Source ON Resistance._2.926 + 0.05AG: RDS(ON)=130m (Max.) @ VGS=-4.5V. _B 2.80 + 0.15_B1 1.626 + 0.05: RDS(ON)=190m (Max.) @

 9.3. Size:55K  kec
kma2d4p20sa.pdfpdf_icon

KMA2D7DP20X

SEMICONDUCTOR KMA2D4P20SATECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.EFEATURES BVDSS=-20V, ID=-2.4A. DIM MILLIMETERS_A 2.926 0.05+Drain-Source ON Resistance._B 1.626 0.05+C 1.25 MAX: RDS(ON)=100m (Max.) @ VGS=-4.5V.23 _D0.40 + 0.05_E2.80 + 0.15: RDS(ON)=175m (M

Другие MOSFET... KTK5164U , KF70N06F , KF70N06P , KF80N08F , KF80N08P , KMA010P20Q , KMA2D0DP20X , KMA2D4P20SA , STF13NM60N , KMA2D8P20X , KMA3D0N20SA , KMA3D6N20SA , KMA4D5P20X , KMA4D5P20XA , KMA5D8DP20Q , KMA6D5P20Q , KMA7D0NP30Q .

History: MTD06N04Q8 | MTB09N06J3 | BRFL10N65 | NTP5860N | SUN1060I2 | SFG100N08PF | VN66AFD

 

 
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