Справочник MOSFET. KMB014P30QA

 

KMB014P30QA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KMB014P30QA
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 65.5 nC
   trⓘ - Время нарастания: 20.3 ns
   Cossⓘ - Выходная емкость: 980 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: FLP8

 Аналог (замена) для KMB014P30QA

 

 

KMB014P30QA Datasheet (PDF)

 ..1. Size:58K  kec
 kmb014p30qa.pdf

KMB014P30QA KMB014P30QA

SEMICONDUCTOR KMB014P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Battery pack. HTD PG LFEATURES AVDSS=-30V, ID=-14A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2B1 _

 9.1. Size:57K  kec
 kmb010p30qa.pdf

KMB014P30QA KMB014P30QA

SEMICONDUCTOR KMB010P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Battery pack. HTD PG LFEATURES AVDSS=-30V, ID=-10A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2B1 _

 9.2. Size:395K  kec
 kmb012n40da.pdf

KMB014P30QA KMB014P30QA

SEMICONDUCTOR KMB012N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and Power LC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70 +

 9.3. Size:462K  kec
 kmb012n30q.pdf

KMB014P30QA KMB014P30QA

SEMICONDUCTOR KMB012N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=12A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=7m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=11

 9.4. Size:803K  kec
 kmb012n30qa.pdf

KMB014P30QA KMB014P30QA

SEMICONDUCTOR KMB012N30QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=12A.DIM MILLIMETERSDrain to Source On Resis

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