KMB4D5DN60QA. Аналоги и основные параметры
Наименование производителя: KMB4D5DN60QA
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 34.5 ns
Cossⓘ - Выходная емкость: 45 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
Тип корпуса: FLP8
Аналог (замена) для KMB4D5DN60QA
- подборⓘ MOSFET транзистора по параметрам
KMB4D5DN60QA даташит
kmb4d5dn60qa.pdf
SEMICONDUCTOR KMB4D5DN60QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. H T D P G L FEATURES A VDSS=60V, ID=4.5A. DIM MILLIMETERS A _ + Drain-Source ON
kmb4d5np55q.pdf
SEMICONDUCTOR KMB4D5NP55Q TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES N-Channel A VDSS=55V, ID=4.5A. DIM MILLIMETERS RDS(ON)=60m (Max.) @ VGS=10V A 5.05+0.25/-0.20 RDS(ON)=95m (Max.) @
kmb4d8dn55q.pdf
SEMICONDUCTOR KMB4D8DN55Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=55V, ID=4.8A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=50m (Max.) @ VGS=10V _ 3
kmb4d0n30sa.pdf
SEMICONDUCTOR KMB4D0N30SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for portable equipment. L B L DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX FEATURES 2 3 D 0.40+0.15/-0.05
Другие MOSFET... KMB060N60PA , KMB080N75PA , KMB2D0N60SA , KMB3D0P30SA , KMB3D5N40SA , KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , K2611 , KMB4D5NP55Q , KMB4D8DN55Q , KMB5D0NP40Q , KMB5D5NP30Q , KMB6D0DN30QA , KMB6D0DN35QA , KMB6D0NP40QA , KMB6D6N30Q .
History: KI5905DC | KMB012N30Q
History: KI5905DC | KMB012N30Q
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Список транзисторов
Обновления
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