Справочник MOSFET. KMB7D0DN40Q

 

KMB7D0DN40Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KMB7D0DN40Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.7 nC
   trⓘ - Время нарастания: 3.6 ns
   Cossⓘ - Выходная емкость: 117 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: FLP8

 Аналог (замена) для KMB7D0DN40Q

 

 

KMB7D0DN40Q Datasheet (PDF)

 ..1. Size:461K  kec
 kmb7d0dn40q.pdf

KMB7D0DN40Q KMB7D0DN40Q

SEMICONDUCTOR KMB7D0DN40QTECHNICAL DATA Dual N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AVDSS=40V, ID=7A.DIM MILLIMETERSLow Drain-Source ON Resistance.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V _3.90

 0.1. Size:81K  kec
 kmb7d0dn40qa.pdf

KMB7D0DN40Q KMB7D0DN40Q

SEMICONDUCTOR KMB7D0DN40QATECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in PC, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _VDS

 0.2. Size:833K  kec
 kmb7d0dn40qb.pdf

KMB7D0DN40Q KMB7D0DN40Q

SEMICONDUCTOR KMB7D0DN40QBTECHNICAL DATA Dual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheHcharacteristics. It is mainly suitable for power management in PC, portableTequipment and battery powered systems. D P GLUAFEATURES DIM MILLIMETERSVDS

 8.1. Size:370K  kec
 kmb7d0n40qa.pdf

KMB7D0DN40Q KMB7D0DN40Q

SEMICONDUCTOR KMB7D0N40QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for power management in pc, portable HTequipment and battery powered systems.D PG LAFEATURES DIM MILLIMETERSA _+VDSS=4

 8.2. Size:88K  kec
 kmb7d0np30qa.pdf

KMB7D0DN40Q KMB7D0DN40Q

SEMICONDUCTOR KMB7D0NP30QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for Back-light Inverter.HTD PG LFEATURES N-ChannelA: VDSS=30V, ID=7A.DIM MILLIMETERSA _+: RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2B1 _3.94 + 0.2: RDS(ON)=39m (Max.) @ VGS=4.5VB2 _6.02+ 0.38 5D _

 8.3. Size:393K  kec
 kmb7d0np30q.pdf

KMB7D0DN40Q KMB7D0DN40Q

SEMICONDUCTOR KMB7D0NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7A.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V_3.90 + 0.3B18 5 _

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