KMB7D0DN40QB - описание и поиск аналогов

 

KMB7D0DN40QB. Аналоги и основные параметры

Наименование производителя: KMB7D0DN40QB

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 105 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: FLP8

Аналог (замена) для KMB7D0DN40QB

- подборⓘ MOSFET транзистора по параметрам

 

KMB7D0DN40QB даташит

 ..1. Size:833K  kec
kmb7d0dn40qb.pdfpdf_icon

KMB7D0DN40QB

SEMICONDUCTOR KMB7D0DN40QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for power management in PC, portable T equipment and battery powered systems. D P G L U A FEATURES DIM MILLIMETERS VDS

 3.1. Size:461K  kec
kmb7d0dn40q.pdfpdf_icon

KMB7D0DN40QB

SEMICONDUCTOR KMB7D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, H portable equipment and battery powered systems. T D P G L FEATURES A VDSS=40V, ID=7A. DIM MILLIMETERS Low Drain-Source ON Resistance. A 5.05+0.25/-0.20 RDS(ON)=25m (Max.) @ VGS=10V _ 3.90

 3.2. Size:81K  kec
kmb7d0dn40qa.pdfpdf_icon

KMB7D0DN40QB

SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ VDS

 8.1. Size:370K  kec
kmb7d0n40qa.pdfpdf_icon

KMB7D0DN40QB

SEMICONDUCTOR KMB7D0N40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable H T equipment and battery powered systems. D P G L A FEATURES DIM MILLIMETERS A _ + VDSS=4

Другие MOSFET... KTK919S , KTK920BT , KTK920BU , KTK920T , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , P55NF06 , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P .

History: NTP6413AN

 

 

 

 

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