KHB1D9N60I - аналоги и даташиты транзистора

 

KHB1D9N60I - Даташиты. Аналоги. Основные параметры


   Наименование производителя: KHB1D9N60I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 45.7 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.8 Ohm
   Тип корпуса: IPAK
 

 Аналог (замена) для KHB1D9N60I

   - подбор ⓘ MOSFET транзистора по параметрам

 

KHB1D9N60I Datasheet (PDF)

 5.1. Size:964K  kec
 khb1d9n60d i.pdf pdf_icon

KHB1D9N60I

KHB1D9N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D9N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching modeLC D_A 6.60 + 0.20_B 6.10 + 0.20power sup

 9.1. Size:1023K  kec
 khb1d0n60i.pdf pdf_icon

KHB1D9N60I

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A

 9.2. Size:957K  kec
 khb1d0n60d i.pdf pdf_icon

KHB1D9N60I

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe

 9.3. Size:412K  kec
 khb1d0n70g.pdf pdf_icon

KHB1D9N60I

KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... KF9N50F , KF9N50P , KF3N80D , KF3N80I , KF60N06P , KHB1D0N60D , KHB1D0N70G , KHB1D9N60D , AON6414A , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P , KHB3D0N90F1 , KHB3D0N90F2 , KHB3D0N90P1 .

 

 
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