KHB9D0N50P1 - аналоги, параметры транзистора - Справочник транзисторов

KHB9D0N50P1 даташит

..1. Size:1317K kec
khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V

7.1. Size:418K kec
khb9d0n90n1.pdf pdf_icon

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin

7.2. Size:1235K kec
khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I

7.3. Size:419K kec
khb9d0n90na.pdf pdf_icon

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching

Другие MOSFET... KHB7D5N60F1 , KHB7D5N60F2 , KHB7D5N60P1 , KHB8D8N25F , KHB8D8N25F2 , KHB8D8N25P , KHB9D0N50F1 , KHB9D0N50F2 , AO4407 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , KQ9N50P .