Справочник MOSFET. KMB054N40IA

 

KMB054N40IA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: KMB054N40IA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 54 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: IPAK
     - подбор MOSFET транзистора по параметрам

 

KMB054N40IA Datasheet (PDF)

 ..1. Size:903K  kec
kmb054n40ia.pdfpdf_icon

KMB054N40IA

SEMICONDUCTOR KMB054N40IATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for Back-light Inverter and PowerSupply.FEATURES VDSS=40V, ID=54A.Low Drain-Source ON Resistance.: RDS(ON)=8.5m(Max.) @ V

 5.1. Size:816K  kec
kmb054n40dc.pdfpdf_icon

KMB054N40IA

SEMICONDUCTOR KMB054N40DCTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

 5.2. Size:241K  kec
kmb054n40db.pdfpdf_icon

KMB054N40IA

SEMICONDUCTOR KMB054N40DBTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

 5.3. Size:237K  kec
kmb054n40da.pdfpdf_icon

KMB054N40IA

SEMICONDUCTOR KMB054N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HUFA75321D3ST | NCE30H29D | 2SK3572-Z | GSM3306WS | IRF7478 | SL60N06 | STP6N60FI

 

 
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