KMB6D0DN35QB - аналоги, параметры транзистора

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SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for DC/DC Converters. T D P G L U FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS Drain-Source ON Resistance. _ + A

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SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2

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SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS D

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SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ +

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