KHB019N20F2 - описание и поиск аналогов

 

Аналоги KHB019N20F2. Основные параметры


   Наименование производителя: KHB019N20F2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO220IS
 

 Аналог (замена) для KHB019N20F2

   - подбор ⓘ MOSFET транзистора по параметрам

 

KHB019N20F2 даташит

 ..1. Size:90K  kec
 khb019n20f2 khb019n20p1.pdf pdf_icon

KHB019N20F2

KHB019N20P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB019N20P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for DC/DC converters B B 15.95 MAX Q

 5.1. Size:497K  kec
 khb019n20p1 f1 f2.pdf pdf_icon

KHB019N20F2

KHB019N20P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB019N20P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for DC/DC converters B B 15.95 MAX Q

 9.1. Size:1322K  kec
 khb011n40f1 khb011n40f2 khb011n40p1.pdf pdf_icon

KHB019N20F2

KHB011N40P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V

Другие MOSFET... KMB8D0P30QA , KMD4D5P30XA , KTK951S , KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , IRF840 , KHB019N20P1 , KHB1D0N60G , KHB1D0N60I , KHB1D2N80D , KHB1D2N80I , KHB7D0N65F1 , KHB9D5N20F , KTK211 .

 

 
Back to Top

 


 
.