KHB1D2N80D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: KHB1D2N80D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 25 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 13 Ohm
Тип корпуса: DPAK
Аналог (замена) для KHB1D2N80D
KHB1D2N80D Datasheet (PDF)
khb1d2n80d i.pdf

KHB1D2N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D2N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_switching mode p
khb1d0n60i.pdf

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A
khb1d0n60d i.pdf

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe
khb1d0n70g.pdf

KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB
Другие MOSFET... KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , KHB019N20F2 , KHB019N20P1 , KHB1D0N60G , KHB1D0N60I , 50N06 , KHB1D2N80I , KHB7D0N65F1 , KHB9D5N20F , KTK211 , KTK596 , KTK597 , KTK597E , KTK597TV .
History: STP8NK80Z | SVF4N60CAMN | IRF7507PBF | SMP3003-TL-1E | STB30NM50N | IPI200N25N3 | SSF3612E
History: STP8NK80Z | SVF4N60CAMN | IRF7507PBF | SMP3003-TL-1E | STB30NM50N | IPI200N25N3 | SSF3612E



Список транзисторов
Обновления
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