KHB1D2N80D datasheet, аналоги, основные параметры

Наименование производителя: KHB1D2N80D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 90 ns

Cossⓘ - Выходная емкость: 25 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 13 Ohm

Тип корпуса: DPAK

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Аналог (замена) для KHB1D2N80D

- подборⓘ MOSFET транзистора по параметрам

 

KHB1D2N80D даташит

 ..1. Size:966K  kec
 khb1d2n80d i.pdf pdf_icon

KHB1D2N80D

KHB1D2N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ switching mode p

 9.1. Size:1023K  kec
 khb1d0n60i.pdf pdf_icon

KHB1D2N80D

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A

 9.2. Size:957K  kec
 khb1d0n60d i.pdf pdf_icon

KHB1D2N80D

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe

 9.3. Size:412K  kec
 khb1d0n70g.pdf pdf_icon

KHB1D2N80D

KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... KHB011N40F1, KHB011N40F2, KHB011N40P1, KHB019N20F1, KHB019N20F2, KHB019N20P1, KHB1D0N60G, KHB1D0N60I, IRF540N, KHB1D2N80I, KHB7D0N65F1, KHB9D5N20F, KTK211, KTK596, KTK597, KTK597E, KTK597TV