BSS138WT1 - описание и поиск аналогов

FM120-M WILLAS BSS138WT1 THRU 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim

LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th)

December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22A transistor. These products have been designed to RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22A minimize on-state resistance while provide rugged, High density cell design for extremely

BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-323 Low Gate Threshold Voltage Case Material Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Matte Tin Finish

BSS138W SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 3.5 DS(on),max Enhancement mode I 0.28 A D Logic level dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-323 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138W PG-SOT-323 H SWs 6327 3

Features Maximum Ratings

BSS138W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 Description GATE * Typical applications are dc dc converters, SOT-323(SC-70) power management in portable and battery powered 2 SOURCE products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features * Simple Drive Requirement * Small Package Outline Maximum Ratings (TA=2

BSS138W www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2 at VGS = 10 V 60 300 Low On-Resistance 2 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns SOT-323 Low Input and Output Leakage SC-70 (3-LEADS) TrenchFET P

RoHS COMPLIANT BSS138W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /