SE3400 - описание и поиск аналогов

FM120-M WILLAS THRU SE3400 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOT-23 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize bo

KSE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

KSE340 NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER TO-126 SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complement to KSE350 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter- Base Voltage VEBO 5 V Collector Current IC 500 mA Collector D

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FM120-M WILLAS THRU SE340 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize bo

FM120-M WILLAS THRU SE3406 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize bo

FM120-M WILLAS THRU SE3407 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b

FM120-M WILLAS THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to N-Chan

HIGH VOLTAGE COMPLEMENT TRANSISTORS R KSE340 KSE350 APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS RoHS pro

SE3401 P-Channel Enhancement Mode Power MOSFET Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Batt

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE3401 -4.2A,-30V P-Channel MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide VDS (V) =-30V the best combination of fast switching, low ID =-4.2A (VGS = -10V) on-resistance and cost-effectiveness. RDS(ON)

SHANGHAI Jan 2015 MICROELECTRONICS CO., LTD. SE3401B -2.8A,-20V P-Channel MOSFET Revision A General Description Features ID =-2.8A The MOSFETs from SINO-IC provide VDS (V) =-20V the best combination of fast switching, low RDS(ON)

SE3407 P-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =-30V DS operation voltage. This device is suitable for R =40m @V =-10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

isc Silicon NPN Power Transistor KSE340J DESCRIPTION High Collector-Emitter breakdown voltage Low Collector Saturation Voltage Complement to Type KSE350J Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage general purpose applications Suitable for transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor KSE340 DESCRIPTION High Collector-Emitter breakdown voltage Low Collector Saturation Voltage Complement to Type KSE350 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage general purpose applications Suitable for transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE