IRF521FI - описание и поиск аналогов

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 60m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150 C

PD - 91434A IRF5210 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

PD - 95408 IRF5210PbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.06 l P-Channel G l Fully Avalanche Rated ID = -40A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 60m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150 C

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175 C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210,IIRF5210 FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extreme